Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SB1185 |
Click to view a larger image
| Part Number | 2SB1185 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -2A ·Complement to Type 2SD1762 ·Minimum Lot-to-Lot ... |
| Features |
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -0.5A; VCE= -3V
COB
Output Capacitance
IE= 0; VCB= -10V; ftest=1MHz
fT
Current-Gain—Bandwidth Product
IE= 0.5A; VCE= -5V; ftest=... |
| Document |
 2SB1185 Data Sheet
PDF 213.93KB |
| Distributor | Stock | Price | Buy |
|---|
