2SB762 INCHANGE PNP Transistor Datasheet, en stock, prix

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2SB762

INCHANGE
2SB762
2SB762 2SB762
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Part Number 2SB762
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD857 ·Minimum Lot-to-Lot variations for robust device performance ...
Features or-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -4V ICEO Collector Cutoff Current VCE= -30V; IB= 0 ICES Collector Cutoff Current VCE= -60V; VBE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -4V hFE-2 DC Current Gain IC= -3A; VCE= -4V
 hFE-1 Classifications R Q P 40-90 70-150 120-250 2SB762 MIN TYP. MAX UNIT -60 V -1.5 V -2.0 V -700 μA -400 μA -7 mA 40 250 15 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. T...

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