2SB762 |
Part Number | 2SB762 |
Manufacturer | INCHANGE |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD857 ·Minimum Lot-to-Lot variations for robust device performance ... |
Features |
or-Emitter Saturation Voltage IC= -4A; IB= -0.4A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -4V
ICEO
Collector Cutoff Current
VCE= -30V; IB= 0
ICES
Collector Cutoff Current
VCE= -60V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
hFE-2
DC Current Gain
IC= -3A; VCE= -4V
hFE-1 Classifications R Q P 40-90 70-150 120-250 2SB762 MIN TYP. MAX UNIT -60 V -1.5 V -2.0 V -700 μA -400 μA -7 mA 40 250 15 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. T... |
Document |
2SB762 Data Sheet
PDF 213.07KB |
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