2SB600 INCHANGE PNP Transistor Datasheet, en stock, prix

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2SB600

INCHANGE
2SB600
2SB600 2SB600
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Part Number 2SB600
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·High Power Dissipation- : PC= 200W(Max)@TC=25℃ ·Complement to Type 2SD555 ·Minimum Lot-to-Lot variations for robust device performance and...
Features tter Saturation Voltage IC= -10A; IB= -1A ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -50mA; VCE= -5V hFE-2 DC Current Gain IC= -2A; VCE= -5V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz fT Current-Gain—Bandwidth Product IC= -1A; VCE= -10V
 hFE-2 Classifications S R Q 40-80 60-120 100-200 2SB600 MIN TYP. MAX UNIT -3.0 V -3.0 V -0.1 mA -0.1 mA 20 40 200 400 pF 4 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notificati...

Document Datasheet 2SB600 Data Sheet
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