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TIP101 |
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| Part Number | TIP101 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 2.5V(Max)@ IC... |
| Features |
T
Rth j-c Thermal Resistance,Junction to Case
1.56 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc website： www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
TIP101
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A, IB= 80mA
VBE(on) Base-Emitter On Voltage
IC= 8A; VCE= 4V
... |
| Document |
 TIP101 Data Sheet
PDF 208.99KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIP100 |
SemiHow |
NPN Epitaxial Silicon Transistor |
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| 2 | TIP100 |
TAITRON |
Darlington NPN Power Transistors |
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| 3 | TIP100 |
Motorola |
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
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| 4 | TIP100 |
Power Innovations Limited |
NPN SILICON POWER DARLINGTONS |
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| 5 | TIP100 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Darlington Transistor |
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