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MJE700 |
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| Part Number | MJE700 |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain— : hFE = 2000(TYP) @ IC= -2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed sw... |
| Features |
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -30mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -40mA
VBE(on)-1 Base-Emitter On Voltage
IC= -1.5A; VCE= -3V
VBE(on)-2 Base-Emitter On Voltage
IC= -4A; VCE= -3V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= -80V; IB= 0
VCB= -80V; IE= 0 VCB= -80V; IE= 0;TC= 100℃
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1.5 A ; VCE= -3V
hFE-2
DC Current Gain
IC= -4A ; VCE= ... |
| Document |
 MJE700 Data Sheet
PDF 207.61KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJE700 |
Motorola |
4.0 AMPERE DARLINGTON POWER TRANSISTORS |
|
| 2 | MJE700 |
ON |
DARLINGTON POWER TRANSISTORS |
|
| 3 | MJE700 |
Fairchild |
PNP Epitaxial Silicon Darlington Transistor |
|
| 4 | MJE700 |
Central Semiconductor |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
|
| 5 | MJE700G |
ON Semiconductor |
Plastic Darlington Complementary Silicon Power Transistors |
|