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FJA4313 |
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| Part Number | FJA4313 |
| Manufacturer | INCHANGE |
| Description | ·High Collector Breakdown Voltage- : V(BR)CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to Type FJA4213 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA... |
| Features |
tor-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞
230
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
230
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A
3.0
V
VBE(on)
Base-Emitter On Voltage
IC= 7A ; VCE= 5V
1.5
V
ICBO
Collector Cutoff Current
VCB= 230V ; IE= 0
5 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5 μA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
55
160
hFE-2
DC Current Gain
IC= 7A; VCE= 5V
35
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
200
pF
fT
Current... |
| Document |
 FJA4313 Data Sheet
PDF 200.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FJA4310 |
INCHANGE |
NPN Transistor |
|
| 2 | FJA4310 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 3 | FJA4313 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 4 | FJA4210 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 5 | FJA4210 |
INCHANGE |
PNP Transistor |
|