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FJA4213 |
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| Part Number | FJA4213 |
| Manufacturer | INCHANGE |
| Description | ·High Collector Breakdown Voltage- : V(BR)CEO= -230V(Min.) ·Good Linearity of hFE ·Complement to Type FJA4313 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI... |
| Features |
Collector-Emitter Breakdown Voltage IC= -10mA ; RBE= ∞
-230
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA; IE= 0
-230
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
-5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A
-3.0 V
VBE(on)
Base-Emitter On Voltage
IC= -7A; VCE= -5V
-1.5 V
ICBO
Collector Cutoff Current
VCB= -230V ; IE= 0
-5 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-5 μA
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
55
160
hFE-2
DC Current Gain
IC= -7A; VCE= -5V
35
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1.0... |
| Document |
 FJA4213 Data Sheet
PDF 202.82KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FJA4210 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 2 | FJA4210 |
INCHANGE |
PNP Transistor |
|
| 3 | FJA4213 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 4 | FJA4310 |
INCHANGE |
NPN Transistor |
|
| 5 | FJA4310 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|