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FJA4210 |
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| Part Number | FJA4210 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·DC Current Gain- : hFE= 50(Min)@ IC= -3A ·Complement to Type FJA4310 ·Minimum Lot-to-Lot variations for robust device performance and reli... |
| Features |
ase Breakdown Voltage
IC= -5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB= -200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -3A; VCE= -4V
COB
Collector Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -5V
FJA4210
MIN TYP. MAX UNIT
-140
V
-200
V
-6
V
-0.5 V
-10 μA
-10 μA
50
180
400
pF
30
MHz
hFE Classifications R O Y 50-100 70-140 90-180 Notice： ISC reserves th... |
| Document |
 FJA4210 Data Sheet
PDF 197.83KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FJA4210 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 2 | FJA4213 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 3 | FJA4213 |
INCHANGE |
PNP Transistor |
|
| 4 | FJA4310 |
INCHANGE |
NPN Transistor |
|
| 5 | FJA4310 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|