BD643F INCHANGE NPN Transistor Datasheet, en stock, prix

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BD643F

INCHANGE
BD643F
BD643F BD643F
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Part Number BD643F
Manufacturer INCHANGE
Description ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD644F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as compleme...
Features is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD643F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 45 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 50mA 3.0 V VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 3V 2.5 V ICBO Collector Cutoff Current VCB= 45V;...

Document Datasheet BD643F Data Sheet
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