BD643F |
Part Number | BD643F |
Manufacturer | INCHANGE |
Description | ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD644F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as compleme... |
Features |
is registered trademark
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BD643F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
45
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA
2.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA
2.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 50mA
3.0
V
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 3V
2.5
V
ICBO
Collector Cutoff Current
VCB= 45V;... |
Document |
BD643F Data Sheet
PDF 210.09KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BD643 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | BD643 |
Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS | |
3 | BD643 |
INCHANGE |
NPN Transistor | |
4 | BD640CS |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS | |
5 | BD640CT |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |