SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 Complian.
651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit IB Base Current 300 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataSheet.net/ Ts Storage Temperature range Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol RthJ-MB RthJ-A Ratings From junction to mounting base From junction to ambient in free air Value 2 62.5 Unit K/W K/W 17/10/2012 COMSET SEMICONDUCTORS 2|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMIC.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation.
·With TO-220C package www.datasheet4u.com ·Complement to type BD644 ·DARLINGTON APPLICATIONS ·For use in output stages i.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BD640CS |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS | |
2 | BD640CT |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS | |
3 | BD6422EFV |
ROHM |
Stepping Motor Drivers | |
4 | BD6423EFV |
ROHM |
Stepping Motor Drivers | |
5 | BD6425 |
ROHM |
Stepping Motor Drivers | |
6 | BD643F |
INCHANGE |
NPN Transistor | |
7 | BD644 |
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor | |
8 | BD644 |
Comset Semiconductors |
Power Transistor | |
9 | BD645 |
Bourns Electronic Solutions |
NPN SILICON POWER DARLINGTONS | |
10 | BD645 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | BD645 |
Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS | |
12 | BD645 |
INCHANGE |
NPN Transistor |