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BD543 |
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| Part Number | BD543 |
| Manufacturer | INCHANGE |
| Description | ·70 W at 25°C Case Temperature ·Complement to Type BD544/A/B/C ·8 A Continuous Collector Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desi... |
| Features |
.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD543
V(BR)CEO
Collector-Emitter Breakdown Voltage
BD543A BD543B
IC= 30mA ; IB= 0
BD543C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A
VBE(on) Base-Emitter On Voltage
IC= 5A; VCE= 4V
BD543
VCE= 40V; VBE= 0
ICES
Collector Cutoff Current
BD543A BD543B
VCE=... |
| Document |
 BD543 Data Sheet
PDF 208.54KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BD540 |
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS |
|
| 2 | BD540 |
INCHANGE |
PNP Transistor |
|
| 3 | BD540A |
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS |
|
| 4 | BD540A |
INCHANGE |
PNP Transistor |
|
| 5 | BD540B |
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS |
|