2SD2396 INCHANGE NPN Transistor Datasheet, en stock, prix

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2SD2396

INCHANGE
2SD2396
2SD2396 2SD2396
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Part Number 2SD2396
Manufacturer INCHANGE
Description ·Low Collector Saturation Voltage ·High DC current gain ·Large collector power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed f...
Features ctor-Emitter Saturation Voltage IC= 2A; IB= 0.05A VBE(sat)* Base-Emitter Saturation Voltage IC= 2A; IB= 0.05A ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE* DC Current Gain IC= 0.5A ; VCE= 4V fT Current-Gain—Bandwidth Product IE= 0.2A ; VCE= 5V COB Output Capacitance *:Single pulse test
 hFE Classification Class H J IE= 0 ; VCB= 10V;ftest= 1.0MHz K hFE 400-800 600-1200 1K-2K MIN TYP. MAX UNIT 60 V 0.8 V 1.5 V 1 μA 1 μA 400 2K 40 MHz 55 pF NOTICE: ISC reserves the rights to make changes of the content herei...

Document Datasheet 2SD2396 Data Sheet
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