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2SD1763 |
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| Part Number | 2SD1763 |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) ·Good Linearity of hFE ·Complement to Type 2SB1186 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation... |
| Features |
O Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
120
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50μA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
0.4
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
1
μA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
1
μA
hFE
DC Current Gain
IC= 0.1A; VCE= 5V
100
320
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1MHz
20
pF
fT
Current-Gain—Bandwidth Product
IE= -0.1A; VCE= 5V; ftest= 30MHz
80
MHz
NOTICE： ISC reserves the rights ... |
| Document |
 2SD1763 Data Sheet
PDF 205.10KB |
| Distributor | Stock | Price | Buy |
|---|
