2SB1370 INCHANGE PNP Transistor Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

2SB1370

INCHANGE
2SB1370
2SB1370 2SB1370
zoom Click to view a larger image
Part Number 2SB1370
Manufacturer INCHANGE
Description ·Low Collector Saturation Voltage- : VCE(sat)= -0.3V(Typ.)@IC= -2A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operati...
Features B= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -0.5A; VCE= -5V fT Current-Gain—Bandwidth Product IC=-0.5A; VCE= -5V; ftest= 5MHz MIN TYP. MAX UNIT -60 V -60 V -5 V -1.5 V -1.5 V -10 μA -10 μA 100 320 15 MHz NOTICE: ISC reserves the rights to make chan...

Document Datasheet 2SB1370 Data Sheet
PDF 205.35KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SB1370
Rohm
Power Transistor Datasheet
2 2SB1370
SavantIC
SILICON POWER TRANSISTOR Datasheet
3 2SB1370
LGE
PNP Transistors Datasheet
4 2SB1370
BLUE ROCKET ELECTRONICS
Silicon PNP transistor Datasheet
5 2SB1371
Panasonic Semiconductor
Silicon PNP Transistor Datasheet
More datasheet from INCHANGE



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact