MTP3N50E |
Part Number | MTP3N50E |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d... |
Features |
·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·Popular AC-DC applications ·Power supply ·Switching applications INCHANGE Semiconductor MTP3N50E ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Drain Current-Single Pulsed ±20 3 10 10 PD Total Dissipation 50 Tj Operating Junction Temperature -65~150 Tstg Sto... |
Document |
MTP3N50E Data Sheet
PDF 199.88KB |
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