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STB23NM60ND |
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| Part Number | STB23NM60ND |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB23NM60ND ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Min... |
| Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=125℃ Drain Current-Single Pulsed ±25 20 12.6 80 PD Total Dissipation @TC=25℃ 150 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL ... |
| Document |
 STB23NM60ND Data Sheet
PDF 198.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STB23NM60N |
STMicroelectronics |
N-channel Power MOSFET |
|
| 2 | STB23NM60ND |
STMicroelectronics |
N-channel Power MOSFET |
|
| 3 | STB23NM50N |
STMicroelectronics |
N-channel Power MOSFET |
|
| 4 | STB23NM50N |
INCHANGE |
N-Channel MOSFET |
|
| 5 | STB23N80K5 |
STMicroelectronics |
N-Channel Power MOSFET |
|