EPC2015 EPC Power Transistor Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

EPC2015

EPC
EPC2015
EPC2015 EPC2015
zoom Click to view a larger image
Part Number EPC2015
Manufacturer EPC
Description eGaN® FET DATASHEET EPC2015 – Enhancement Mode Power Transistor VDSS , 40 V RDS(ON) , 4 mW ID , 33 A NEW PRODUCT EPC2015 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers ...
Features Storage Temperature -40 to 150 ˚C -40 to 150 PARAMETER TEST CONDITIONS MIN Static Characteristics (TJ= 25˚C unless otherwise stated) BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 500 µA 40 IDSS Drain Source Leakage VDS = 32 V, VGS = 0 V Gate-Source Forward Leakage IGSS Gate-Source Reverse Leakage VGS = 5 V VGS = -5 V VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 9 mA 0.7 RDS(ON) Drain-Source On Resistance VGS = 5 V, ID = 33 A Source-Drain Characteristics (TJ= 25˚C unless otherwise stated) VSD Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V, T = 25˚C IS = 0.5 A, ...

Document Datasheet EPC2015 Data Sheet
PDF 1.60MB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 EPC2010
EPC
Power Transistor Datasheet
2 EPC2010C
EPC
Power Transistor Datasheet
3 EPC2012
EPC
Power Transistor Datasheet
4 EPC2012C
EPC
Power Transistor Datasheet
5 EPC2014
EPC
Power Transistor Datasheet
More datasheet from EPC



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact