R1RW0408DGE-2PI |
Part Number | R1RW0408DGE-2PI |
Manufacturer | Renesas (https://www.renesas.com/) |
Description | The R1RW0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designi... |
Features |
• Single 3.3V supply: 3.3V ± 0.3V • Access time: 12ns (max) • Completely static memory ⎯ No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible ⎯ All inputs and outputs • Operating current: 100mA (max) • TTL standby current: 40mA (max) • CMOS standby current : 5mA (max) • Temperature range: −40 to +85°C Ordering Information Type No. R1RW0408DGE-2PI Access time 12ns Package 400-mil 36-pin plastic SOJ R10DS0287EJ0100 Rev.1.00 Nov.18.19 Page 1 of 10 R1RW0408DI Series Pin Arrangement Pin Description A0 to A18 I/O1 to I/O8 CS# OE# WE# VCC VSS NC Pin name... |
Document |
R1RW0408DGE-2PI Data Sheet
PDF 360.55KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | R1RW0408DGE-2PR |
Renesas |
4M High Speed SRAM | |
2 | R1RW0408DGE-2LR |
Renesas |
4M High Speed SRAM | |
3 | R1RW0408D |
Renesas |
4M High Speed SRAM | |
4 | R1RW0408DI |
Renesas |
4M High Speed SRAM | |
5 | R1RW0404D |
Renesas |
4M High Speed SRAM |