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VB20200G-E3 |
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| Part Number | VB20200G-E3 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | V20200G-E3, VF20200G-E3, VB20200G-E3, VI20200G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A TO-220AB TM... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. MECHANICAL... |
| Document |
 VB20200G-E3 Data Sheet
PDF 209.15KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VB20200G |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | VB20200C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | VB20200C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | VB20100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | VB20100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|