SDT12S60 - Infineon Technologies AG

SDT12S60 Silicon Carbide Schottky Diode

and charts stated herein. Infineon Technologies is an approved CECC manufacturer. SDT12S60 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical require.

Features

storage temperature A²s V W °C VRRM VRSM Ptot T j , Tstg Page 1 2002-01-14 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded RthJC RthJA Symbol min. Values typ. SDT12S60 Unit max. 1.7 62 K/W Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF=12A, T j=25°C IF=12A, T j=150°C Symbol min. VF IR - Values typ. max. Unit V 1.5 1.7 40 100 1.7 2.1 µA 400 2000 Reverse current V R=600V, Tj=25°C V R=600V, Tj=150°C E.