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SSD06N70SL |
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| Part Number | SSD06N70SL |
| Manufacturer | SeCoS |
| Description | The SSD06N70SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .... |
| Features |
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available
1
Gate
2
Drain
3
Source
A BC
D
GE
K HF MJ
N O P
REF.
Millimeter Min. Max.
REF.
Millimeter Min. Max.
A 6.35 6.90 J 2.30 REF.
B 4.95 5.50 K 0.64 1.14
C 2.10 2.50 M 0.50 0.95
D 0.43 0.9 N 1.3 1.8
E 6.0 7.5 O 0 0.13
F 2.80 REF P 0.58REF.
G 5.40 6.40
H 0.60 1.20
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 700
Gate-Source Voltage
VGS ±30
Continuous Drain Current
TC=... |
| Document |
 SSD06N70SL Data Sheet
PDF 505.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSD01L60 |
SeCoS |
N-Channel Enhancement Mode Power MosFET |
|
| 2 | SSD02N60J-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 3 | SSD02N60SL |
SeCoS |
N-Channel MOSFET |
|
| 4 | SSD04N60J |
SeCoS |
N-Channel MOSFET |
|
| 5 | SSD0817 |
ETC |
LCD Segment / Common Driver |
|