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STGB30H60DFB |
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| Part Number | STGB30H60DFB |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between con... |
| Features |
• Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between... |
| Document |
 STGB30H60DFB Data Sheet
PDF 819.52KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STGB30H60DF |
STMicroelectronics |
30A high speed trench gate field-stop IGBT |
|
| 2 | STGB30H60DLLFBAG |
STMicroelectronics |
Automotive-grade trench gate field-stop IGBT |
|
| 3 | STGB30H65DFB2 |
STMicroelectronics |
high-speed HB2 series IGBT |
|
| 4 | STGB30M65DF2 |
STMicroelectronics |
Trench gate field-stop IGBT |
|
| 5 | STGB30NC60K |
STMicroelectronics |
short circuit rugged IGBT |
|