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NGTB30N135IHR1WG |
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| Part Number | NGTB30N135IHR1WG |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | NGTB30N135IHR1WG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides superior pe... |
| Features |
a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on−state voltage with minimal switching losses. The IGBT is well suited for resonant or soft switching applications.
Features
• Extremely Efficient Trench with Fieldstop Technology • 1350 V Breakdown Voltage • Optimized for Low Losses in IH Cooker Application • Designed for High System Level Robustness • These are Pb−Free Devices Typical Applications • Inductive Heating • Consumer Appliances • Soft Switching ABSOLUTE MAXIMUM RATINGS Rating Symbo... |
| Document |
 NGTB30N135IHR1WG Data Sheet
PDF 131.44KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NGTB30N135IHRWG |
ON Semiconductor |
IGBT |
|
| 2 | NGTB30N120FL2WG |
ON Semiconductor |
IGBT |
|
| 3 | NGTB30N120IHLWG |
ON Semiconductor |
IGBT |
|
| 4 | NGTB30N120IHRWG |
ON Semiconductor |
IGBT |
|
| 5 | NGTB30N120IHSWG |
ON Semiconductor |
IGBT |
|