FFSD10120A |
Part Number | FFSD10120A |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature ... |
Features |
• Max Junction Temperature 175 °C • Avalanche Rated 100 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next gener... |
Document |
FFSD10120A Data Sheet
PDF 845.18KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FFSD1065A |
ON Semiconductor |
Silicon Carbide Schottky Diode | |
2 | FFSD1065B |
ON Semiconductor |
SiC Schottky Diode | |
3 | FFSD1065B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode | |
4 | FFSD0465A |
ON Semiconductor |
Silicon Carbide Schottky Diode | |
5 | FFSD0665A |
ON Semiconductor |
Silicon Carbide Schottky Diode |