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TMS44409P |
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| Part Number | TMS44409P |
| Manufacturer | Texas Instruments (https://www.ti.com/) |
| Description | OE RAS Output Enable Row-Address Strobe The TMS44409 is a high-speed 4 194 304-bit dynamic random-access memory (DRAM) organized as 1 048 576 words of four bits each. This VCC VSS W 5-V Supply Gr... |
| Features |
maximum RAS access times of
60 ns, 70 ns and 80 ns. Maximum power
consumption is as low as 385 mW operating and
6 mW standby. All inputs and outputs, including
clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system
design. Data out is unlatched to allow greater system flexibility.
The TMS44409P is a high-speed, low-power, self-refresh version of the TMS44409 DRAM.
All versions of the TMS44409 / P are offered in a 300-mil 20 / 26 J-lead plastic surface-mount SOJ package ( DJ suffix) and a 20 / 26-lead plastic small outline packag... |
| Document |
 TMS44409P Data Sheet
PDF 399.03KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TMS44409 |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES |
|
| 2 | TMS44400 |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES |
|
| 3 | TMS44400P |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES |
|
| 4 | TMS44100 |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES |
|
| 5 | TMS44100P |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES |
|