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PMZ950UPEL |
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| Part Number | PMZ950UPEL |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and bene... |
| Features |
• Low leakage current • Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Drain-source on-state resistance RDSon = 1.02 Ω 3. Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C VGS = -... |
| Document |
 PMZ950UPEL Data Sheet
PDF 717.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PMZ950UPE |
NXP Semiconductors |
P-channel Trench MOSFET |
|
| 2 | PMZ950UPE |
nexperia |
P-channel MOSFET |
|
| 3 | PMZ1000UN |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |
|
| 4 | PMZ1200UPE |
NXP |
P-channel Trench MOSFET |
|
| 5 | PMZ1200UPE |
nexperia |
P-channel MOSFET |
|