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PMZB670UPE |
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| Part Number | PMZB670UPE |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and b... |
| Features |
Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV Ultra thin package profile of 0.37 mm 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -400 mA; Tj = 25 °C [1] Min -8 - - [1] Device mounted on an FR4 PCB, single-... |
| Document |
 PMZB670UPE Data Sheet
PDF 1.51MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PMZB670UPE |
NXP |
single P-channel Trench MOSFET |
|
| 2 | PMZB600UNE |
NXP |
N-channel Trench MOSFET |
|
| 3 | PMZB600UNE |
nexperia |
N-channel MOSFET |
|
| 4 | PMZB600UNEL |
nexperia |
N-channel MOSFET |
|
| 5 | PMZB1200UPE |
NXP |
P-channel Trench MOSFET |
|