Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance .
Available in both P-type and N-type low barrier designs
Low 1/f noise
Packages rated MSL1, 260 C per JEDEC J-STD-020
Description
Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also av.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CDF7621-203 |
Skyworks |
Silicon Schottky Barrier Diodes | |
2 | CDF7621-000 |
Skyworks |
Silicon Schottky Barrier Diode Bondable Chips and Beam Leads | |
3 | CDF7623-000 |
Skyworks |
Silicon Schottky Barrier Diode Bondable Chips and Beam Leads | |
4 | CDF7623-203 |
Skyworks |
Silicon Schottky Barrier Diodes | |
5 | CDF7623-207 |
Skyworks |
Silicon Schottky Barrier Diodes | |
6 | CDF |
TOKO |
FM CERAMIC DISCRIMINATOR | |
7 | CDF |
RUBYCON CORPORATION |
ALUMINUM ELECTROLYTIC CAPACITORS FOR STROBE FLASH | |
8 | CDF8000L |
Coilcraft |
SMT Data Line EMI Filters | |
9 | CDF8500L |
Coilcraft |
SMT Data Line EMI Filters | |
10 | CDB455C13A |
Murata |
High Performance Ceramic Discriminator | |
11 | CD1408-R1200 |
Bourns Electronic Solutions |
Surface Mount Rectifier Diode | |
12 | CD1408-R1400 |
Bourns Electronic Solutions |
Surface Mount Rectifier Diode |