VB20200C-E3 Vishay Dual High Voltage Trench MOS Barrier Schottky Rectifier Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

VB20200C-E3

Vishay
VB20200C-E3
VB20200C-E3 VB20200C-E3
zoom Click to view a larger image
Part Number VB20200C-E3
Manufacturer Vishay (https://www.vishay.com/)
Description V20200C-E3, VF20200C-E3, VB20200C-E3, VI20200C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A TO-220AB TM...
Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, I...

Document Datasheet VB20200C-E3 Data Sheet
PDF 200.44KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 VB20200C
Vishay
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Datasheet
2 VB20200G
Vishay
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Datasheet
3 VB20200G-E3
Vishay
Dual High Voltage Trench MOS Barrier Schottky Rectifier Datasheet
4 VB20100C
Vishay
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Datasheet
5 VB20100C-E3
Vishay
Dual High Voltage Trench MOS Barrier Schottky Rectifier Datasheet
More datasheet from Vishay



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact