GB25MPS17-247 GeneSiC Silicon Carbide Schottky Diode Datasheet, en stock, prix

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GB25MPS17-247

GeneSiC
GB25MPS17-247
GB25MPS17-247 GB25MPS17-247
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Part Number GB25MPS17-247
Manufacturer GeneSiC
Description GB25MPS17-247 1700V 25A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Th...
Features
• High Avalanche (UIS) Capability
• Enhanced Surge Current Capability
• Superior Figure of Merit QC/IF
• Low Thermal Resistance
• 175 °C Maximum Operating Temperature
• Temperature Independent Switching Behavior
• Positive Temperature Coefficient of VF
• Extremely Fast Switching Speeds Package Case VRRM IF (Tc = 135°C) QC Case K A K TO-247-2 A = 1700 V = 43 A = 92 nC Advantages
• Low Standby Power Losses
• Improved Circuit Efficiency (Lower Overall Cost)
• Low Switching Losses
• Ease of Paralleling without Thermal Runaway
• Smaller Heat Sink Requirements
• Low Reverse Recovery Current
• ...

Document Datasheet GB25MPS17-247 Data Sheet
PDF 305.80KB
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