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M13S64164A-6TG2Y |
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| Part Number | M13S64164A-6TG2Y |
| Manufacturer | ESMT |
| Description | ESMT M13S64164A (2Y) DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Diffe... |
| Features |
z Double-data-rate architecture, two data transfers per clock cycle
z Bi-directional data strobe (DQS)
z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition z Four bank operation z CAS Latency : 2, 2.5, 3 z Burst Type : Sequential and Interleave z Burst Length : 2, 4, 8 z All inputs except data & DM are sampled at the rising edge of the system clock (CLK) z Data I/O transitions on both edges of data strobe (DQS) z DQS is edge-aligned with data for READs; center-aligned with data for WRITEs z Data mask (DM) for write masking only z VDD = 2.5V ± 0.2V,... |
| Document |
 M13S64164A-6TG2Y Data Sheet
PDF 1.19MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | M13S64164A-6TG |
ESMT |
1M x 16 Bit x 4 Banks Double Data Rate SDRAM |
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| 2 | M13S64164A-6BG |
ESMT |
1M x 16 Bit x 4 Banks Double Data Rate SDRAM |
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| 3 | M13S64164A-6BG2Y |
ESMT |
1M x 16 Bit x 4 Banks Double Data Rate SDRAM |
|
| 4 | M13S64164A-4BG2Y |
ESMT |
1M x 16 Bit x 4 Banks Double Data Rate SDRAM |
|
| 5 | M13S64164A-4TG2Y |
ESMT |
1M x 16 Bit x 4 Banks Double Data Rate SDRAM |
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