MURTA200120R |
Part Number | MURTA200120R |
Manufacturer | GeneSiC |
Description | Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MURTA20060 thru MU... |
Features |
• High Surge Capability • Types from 600 V to 1200 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MURTA20060 thru MURTA200120R VRRM = 600 V - 1200 V IF(AV) = 200 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA20060(R) MURTA200120(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 600 424 600 -55 to 150 -55 to 150 1200 --1200 -55 to 150 -55 to 150 Elec... |
Document |
MURTA200120R Data Sheet
PDF 461.37KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MURTA200120 |
GeneSiC |
Silicon Super Fast Recovery Diode | |
2 | MURTA20060 |
GeneSiC |
Silicon Super Fast Recovery Diode | |
3 | MURTA20060R |
GeneSiC |
Silicon Super Fast Recovery Diode | |
4 | MURTA300120 |
GeneSiC |
Silicon Super Fast Recovery Diode | |
5 | MURTA300120R |
GeneSiC |
Silicon Super Fast Recovery Diode |