Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MURTA30060 thru MURTA300120R VRRM = 600 V - 1200 V IF(AV) = 300 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads re.
• High Surge Capability
• Types from 600 V to 1200 V VRRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MURTA30060 thru MURTA300120R
VRRM = 600 V - 1200 V IF(AV) = 300 A
Heavy Three Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MURTA30060(R)
MURTA300120(R)
Repetitive peak reverse voltage
RMS reverse voltage DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
600
424 600 -55 to 150 -55 to 150
1200
--1200 -55 to 150 -55 to 150
Elec.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MURTA300120R |
GeneSiC |
Silicon Super Fast Recovery Diode | |
2 | MURTA30060 |
GeneSiC |
Silicon Super Fast Recovery Diode | |
3 | MURTA30060R |
GeneSiC |
Silicon Super Fast Recovery Diode | |
4 | MURTA200120 |
GeneSiC |
Silicon Super Fast Recovery Diode | |
5 | MURTA200120R |
GeneSiC |
Silicon Super Fast Recovery Diode | |
6 | MURTA20060 |
GeneSiC |
Silicon Super Fast Recovery Diode | |
7 | MURTA20060R |
GeneSiC |
Silicon Super Fast Recovery Diode | |
8 | MURTA400120 |
GeneSiC |
Silicon Super Fast Recovery Diode | |
9 | MURTA400120R |
GeneSiC |
Silicon Super Fast Recovery Diode | |
10 | MURTA40060 |
GeneSiC |
Silicon Super Fast Recovery Diode | |
11 | MURTA40060R |
GeneSiC |
Silicon Super Fast Recovery Diode | |
12 | MURTA500120 |
GeneSiC |
Silicon Super Fast Recovery Diode |