S13003D * NPN TO-126 * * TO-126 1. 2. 3. ( Tc=25 ) BVCEO BVCBO BVEBO Icm Pcm Tjm Tstg 400 600 9 1.5 30 150 55 150 V V V A W ( Tc=25 ) BVCEO BVCBO BVEBO ICEO ICBO IEBO HFE VCE(sat) tf fT IC=1mA IC=1mA IE=1mA VCE=350V VCB=550V VEB=7V VCE=5V IC=1A IB=0 IE=0 IC=0 IB=0 IE=0 IC=0 IC=0.2A IB=0.5A 400 600 9 20 10 10 10 35 0.6 0.3 8 V V V uA uA uA V u.
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S13003ADL |
Jingdao |
Bipolar Junction Transistor | |
2 | S13003DL |
Jingdao |
Bipolar Junction Transistor | |
3 | S1300 |
HAMAMATSU |
Two-dimensional PSD | |
4 | S1300-5MG-BL |
Roithner |
LASER DIODES | |
5 | S1300-5MG-FW |
Roithner |
LASER DIODES | |
6 | S13021-01CT |
HAMAMATSU |
Photo IC | |
7 | S13 |
YS |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
8 | S13174-01SR |
HAMAMATSU |
Photo-IC | |
9 | S13282-01CR |
HAMAMATSU |
Photosensors | |
10 | S134 |
Teledyne |
Commercial Electromechanical Relay | |
11 | S134D |
Teledyne |
Commercial Electromechanical Relay | |
12 | S134DD |
Teledyne |
Commercial Electromechanical Relay |