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The STP165N10F4 is an N-channel enhancement mode Power MOSFET built with STripFET™ DeepGATE™ technology with a new gate structure. The product is tailored to minimize on-resistance. 3 2 1 TO-220 Figure 1. Internal schematic diagram $ ' Table 1. Device summary Order code STP165N10F4 Marking 165N10F4 3 !-V Package TO-220 Packaging Tube N.
Order code STP165N10F4
VDSS 100 V
RDS(on) max
ID
< 5.5 mΩ 120 A
■ N-channel enhancement mode
■ 100% avalanche rated
■ Low gate charge
■ Very low on-resistance
Application
Switching applications
Description
The STP165N10F4 is an N-channel enhancement mode Power MOSFET built with STripFET™ DeepGATE™ technology with a new gate structure. The product is tailored to minimize on-resistance.
3 2 1
TO-220
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary Order code
STP165N10F4
Marking 165N10F4
3
!-V
Package TO-220
Packaging Tube
November 2010
Doc ID 15781.
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