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STB100N6F7 |
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| Part Number | STB100N6F7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charg... |
| Features |
7$%
Order code VDS RDS(on) max. ID PTOT STB100N6F7 60 V 5.6 mΩ 100A 125 W
'3$.
Figure 1. Internal schematic diagram
' 7$%
*
• Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 $0Y Order c... |
| Document |
 STB100N6F7 Data Sheet
PDF 561.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STB100N6F7-2 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | STB100N10F7 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 3 | STB100N10F7 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | STB100NF03L-03 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 5 | STB100NF03L-03-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|