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STP100N6F7 |
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| Part Number | STP100N6F7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charg... |
| Features |
Order code VDS RDS(on) max. ID PTOT STP100N6F7 60 V 5.6 mΩ 100A 125 W
TAB
3 2 1
TO-220
Figure 1. Internal schematic diagram
' 7$%
*
• Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 $0Y Order ... |
| Document |
 STP100N6F7 Data Sheet
PDF 496.09KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP100N6F7 |
INCHANGE |
N-Channel MOSFET |
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| 2 | STP100N10F7 |
STMicroelectronics |
N-channel Power MOSFET |
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| 3 | STP100N10F7 |
INCHANGE |
TO-220C N-Channel MOSFET |
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| 4 | STP100N10F7 |
INCHANGE |
TO-220 N-Channel MOSFET |
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| 5 | STP100N8F6 |
STMicroelectronics |
N-channel Power MOSFET |
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