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The UTC F5N50K-TC is a N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pulse in the avalanche and communication mode. The UTC F5N50K-TC.
* RDS(ON) ≤ 1.8Ω @ VGS=10V, ID=2.5A
* 100% avalanche tested
* High switching speed
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
F5N50KL-TN3-R
F5N50KG-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-252
Pin Assignment 123 GDS
Packing Tape Reel
www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd
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QW-R502-B45.b
F5N50K-TC
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-B45.b
F5N50K-TC
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | F5N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 2 | F5N60 |
ROUM |
5A 600V N-channel Enhancement Mode Power MOSFET |
|
| 3 | F5-75R06KE3_B5 |
Infineon |
IGBT |
|
| 4 | F5001 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
|
| 5 | F5001H |
Fuji Electric |
INTELIGENT POWER SWITCH |
|
| 6 | F5019 |
CSF |
Froide |
|
| 7 | F5033 |
Fuji Electric |
INTELLIGENT POWER MOSFET |
|
| 8 | F50D1G41LB-50YG2M |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory |
|
| 9 | F50D1G41LB-50YG2ME |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory |
|
| 10 | F50D1G41LB-66YG2M |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory |
|
| 11 | F50D1G41LB-66YG2ME |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory |
|
| 12 | F50D2G41LB-50YG2M |
ESMT |
1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory |
|