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HM2301DR |
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| Part Number | HM2301DR |
| Manufacturer | H&M Semiconductor |
| Description | The +0'5 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to mi... |
| Features |
● RDS(ON)= 0.48Ω @VGS=-4.5V ● RDS(ON)= 0.67Ω @VGS=-2.5V ● RDS(ON)= 0.95Ω @VGS=-1.8V ● RDS(ON)= 2.20Ω @VGS=-1.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding ● Load Switch ● DSC Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings -20 ±6 Unit V V * Th Oct, 2014-Ver1.0 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com 01 .3*8 P-Channel 20V (D-S) MOSFET Electrica... |
| Document |
 HM2301DR Data Sheet
PDF 385.91KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HM2301D |
H&M Semiconductor |
P-Channel 20V (D-S) MOSFET |
|
| 2 | HM2301 |
Hanwei |
Digital-output humidity and temperature sensor |
|
| 3 | HM2301A |
H&M Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 4 | HM2301B |
H&M Semiconductor |
P-Channel Trench Power MOSFET |
|
| 5 | HM2301BJR |
H&M Semiconductor |
P-Channel MOSFET |
|