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output calibrated digital signal. It utilizes exclusive digital-signal-collecting-technique and humidity sensing technology, assuring its reliability and stability.Its sensing elements is connected with 8-bit single-chip computer. Every sensor of this model is temperature compensated and calibrated in accurate calibration chamber and the calibration-coeffic.
enable DHT21 to be suited in all kinds of harsh application occasions. Single-row packaged with four pins, making the connection very convenient. Technical Specification: Model Power supply Output signal Sensing element HM2301 3.3-5V DC digital signal via single-bus Polymer humidity capacitor Street Address: No.169 Xuesong Road,National&High Tech Zone,Zhengzhou Zip: 450001 Telephone: 86-371-67169080/70 Fax: 86-371-67169090 E-mail: [email protected] ; [email protected] Website: http://www.hwsensor.com 1 / 6 HM2301 Digital-output humidity and temperature sensor Measurin.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HM2300 |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 2 | HM2300B |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | HM2300C |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 4 | HM2300D |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | HM2300DR |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 6 | HM2300PR |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 7 | HM2301A |
H&M Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 8 | HM2301B |
H&M Semiconductor |
P-Channel Trench Power MOSFET |
|
| 9 | HM2301BJR |
H&M Semiconductor |
P-Channel MOSFET |
|
| 10 | HM2301BKR |
H&M Semiconductor |
P-Channel 20V (D-S) MOSFET |
|
| 11 | HM2301BSR |
H&M Semiconductor |
P-Channel 20V (D-S) MOSFET |
|
| 12 | HM2301D |
H&M Semiconductor |
P-Channel 20V (D-S) MOSFET |
|