HM2301D |
Part Number | HM2301D |
Manufacturer | H&M Semiconductor |
Description | The +0' is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to min... |
Features |
● RDS(ON)= 0.48Ω @VGS=-4.5V ● RDS(ON)= 0.67Ω @VGS=-2.5V ● RDS(ON)= 0.95Ω @VGS=-1.8V ● RDS(ON)= 2.20Ω @VGS=-1.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding ● Load Switch ● DSC 2301* Marking and pin Assignment SOT-23 top view Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings -20 ±6 Unit V V * Th Oct, 2014-Ver1.0 Shenzhen H&M Semiconductor Co.Ltd http://www.hmsemi.com 0... |
Document |
HM2301D Data Sheet
PDF 472.89KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | HM2301 |
Hanwei |
Digital-output humidity and temperature sensor | |
2 | HM2301A |
H&M Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
3 | HM2301B |
H&M Semiconductor |
P-Channel Trench Power MOSFET | |
4 | HM2301BJR |
H&M Semiconductor |
P-Channel MOSFET | |
5 | HM2301BKR |
H&M Semiconductor |
P-Channel 20V (D-S) MOSFET |