BSS131 - Siemens Semiconductor Group

BSS131 SIPMOS Small-Signal Transistor

BSS 131 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G Type BSS 131 Type BSS 131 BSS 131 Pin 2 S Marking SRs Pin 3 D VDS 240 V ID 0.1 A RDS(on) 16 Ω Package SOT-23 Ordering Code Q62702-S565 Q67000-S229 Tape and Reel Information E6327 E6433 Maximum Ratings Parameter Drain source voltage.

Features

/ 150 / 56 Unit °C K/W Tj Tstg RthJA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 240 1.4 0.1 2 1 12 15 2 1 60 30 10 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA nA Ω 16 26 VDS = 240 V, VGS = 0 V, Tj = 25 °C VDS = 240 V, VGS = 0 V, Tj = 125 °C VDS = 130 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current .