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AOT12N50 |
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| Part Number | AOT12N50 |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popula... |
| Features |
energy G
EAS
908
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
dv/dt
40 5
TC=25°C Power Dissipation B Derate above 25oC
PD
250 2
AOTF12N50 12* 8.4*
50 0.4
Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
-55 to 150 300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RqJA RqCS
Maximum Junction-to-Case
RqJC
* Drain current limited by maximum junction temperature.
AOT12N50/AOB12N50 65 0.5 0.5
AOTF12N50 65 -2.5
S
Units V V
A
A mJ mJ V/ns W W/ oC °C... |
| Document |
 AOT12N50 Data Sheet
PDF 464.82KB |
| Distributor | Stock | Price | Buy |
|---|
