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PDS04N15 |
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| Part Number | PDS04N15 |
| Manufacturer | Potens semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
| Features |
150V,4A, RDS(ON) =65mΩ@VGS = 10V Improved dv/dt capability Fast switching Green Device Available Applications Networking Load Switch LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissipation (TC=25℃) Power Dissipation – De... |
| Document |
 PDS04N15 Data Sheet
PDF 462.96KB |
| Distributor | Stock | Price | Buy |
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