The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode. Rev. V1 Chip Electrical Specifications: TA = 25°C Model Configuration MSS30-046-C15 Single Junction VF Typ. V.
VF, RD and CJ Matching Options
Chip, Beam Lead and Packaged Devices
Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode.
Rev. V1
Chip
Electrical Specifications: TA = 25°C
Model
Configuration
MSS30-046-C15 Single Junction
VF Typ.
V
0.29
MSS30-050-C15 Single Junction 0.27
Test Conditions
IF = 1 mA
VBR Min.
V
2
CJ Ty.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MSS30-148-E25 |
MA-COM |
Low Barrier Silicon Schottky Diodes | |
2 | MSS30-148-H20 |
MA-COM |
Low Barrier Silicon Schottky Diodes | |
3 | MSS30-142-B10B |
MA-COM |
Low Barrier Silicon Schottky Diodes | |
4 | MSS30-142-E25 |
MA-COM |
Low Barrier Silicon Schottky Diodes | |
5 | MSS30-142-H20 |
MA-COM |
Low Barrier Silicon Schottky Diodes | |
6 | MSS30-154-B10B |
MA-COM |
Low Barrier Silicon Schottky Diodes | |
7 | MSS30-154-E25 |
MA-COM |
Low Barrier Silicon Schottky Diodes | |
8 | MSS30-154-H20 |
MA-COM |
Low Barrier Silicon Schottky Diodes | |
9 | MSS30-046-C15 |
MA-COM |
Low Barrier Silicon Schottky Diodes | |
10 | MSS30-046-P55 |
MA-COM |
Low Barrier Silicon Schottky Diodes | |
11 | MSS30-046-P86 |
MA-COM |
Low Barrier Silicon Schottky Diodes | |
12 | MSS30-050-C15 |
MA-COM |
Low Barrier Silicon Schottky Diodes |