MG50G2CL3 - Toshiba

MG50G2CL3 Silicon NPN Triple Transistor

SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in ran MOTOR CONTROL APPLICATIONS. FEATURES . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diods are Built-in to 1 Package. 92 80 : .Bl 01 -i .B2.pr J . in to s LLJ-ej A —054= El C2 5-M4 . High DC Current Gain : hpE= 100(Min. ) (Ic=50A) . Lo.

Features

. The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diods are Built-in to 1 Package. 92 80 : .Bl 01 -i .B2.pr J . in to s LLJ-ej A —054= El C2 5-M4 . High DC Current Gain : hpE= 100(Min. ) (Ic=50A) . Low Saturation Voltage: VcE(sat)=2V(Max. ) (Ic=50A) . High Speed : tf=2/
*s(Max. ) (Ic=50A) EQUIVALENT CIRCUIT 68 35 13 13 13 13 26 5 3 33 1' 15 10 10 ,10, mm r-A TA k / 1 kv+y [ JL^lt-i- - 90 33 CO <
* ci o O E2 JEDEC EIAJ TOSHIBA Weight : 210g 2--68A1A Bl E1/C2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Colle.