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BGA5L1BN6 |
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| Part Number | BGA5L1BN6 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | BGA5L1BN6 BGA5L1BN6 18dB High Gain Low Noise Amplifier for LTE Lowband Features • Operating frequencies: 600 - 1000 MHz • Insertion power gain: 18.5 dB • Insertion Loss in bypass mode: 2.7 dB • Low ... |
| Features |
• Operating frequencies: 600 - 1000 MHz • Insertion power gain: 18.5 dB • Insertion Loss in bypass mode: 2.7 dB • Low noise figure: 0.7 dB • Low current consumption: 8.2 mA • Multi-state control: Bypass- and high gain-Mode • Ultra small TSNP-6-10 leadless package • RF output internally matched to 50 Ohm • Low external component count 0.7 x 1.1 mm2 Application The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA off... |
| Document |
 BGA5L1BN6 Data Sheet
PDF 287.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BGA524N6 |
Infineon |
Silicon Germanium Low Noise Amplifier |
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| 2 | BGA5M1BN6 |
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18dB High Gain Low Noise Amplifier |
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| 3 | BGA123L4 |
Infineon |
Small Footprint Ultra Low Current Low Noise Amplifier |
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| 4 | BGA2001 |
NXP |
Silicon MMIC amplifier |
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| 5 | BGA2003 |
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