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NCE82H110 |
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| Part Number | NCE82H110 |
| Manufacturer | NCE Power Semiconductor |
| Description | The NCE82H110 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 82V,ID =110A RDS... |
| Features |
● VDS = 82V,ID =110A RDS(ON) < 7mΩ @ VGS=10V (Typ:5.9mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Pa... |
| Document |
 NCE82H110 Data Sheet
PDF 330.85KB |
| Distributor | Stock | Price | Buy |
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|---|---|---|---|---|
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