NCE8010S NCE Power Semiconductor N-Channel Enhancement Mode Power MOSFET Datasheet, en stock, prix

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NCE8010S

NCE Power Semiconductor
NCE8010S
NCE8010S NCE8010S
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Part Number NCE8010S
Manufacturer NCE Power Semiconductor
Description The NCE8010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 80V,ID =10A RDS(O...
Features
● VDS = 80V,ID =10A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ) RDS(ON) < 20mΩ @ VGS=4.5V (Typ:14.8mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Low gate to drain charge to reduce switching losses Schematic diagram Application
● Power switching application
● Load switch Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package NCE8010S NCE8010S SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter...

Document Datasheet NCE8010S Data Sheet
PDF 403.34KB
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