BL5N65F - GME

BL5N65F N-Channel Power Mosfet

5A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =2.4Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 6.5 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL5N65F MAXIMUM RATING @ Ta=25℃ unless ot.

Features

 RDS(ON) =2.4Ω@ VGS = 10V
 Ultra low gate charge ( typical 15 nC ) Pb Lead-free
 Low reverse transfer Capacitance ( CRSS = typical 6.5 pF )
 Fast switching capability
 Avalanche energy specified
 Improved dv/dt capability, high ruggedness Production specification BL5N65F MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID IDM EAS EAR dv/dt Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation RθJA Thermal resistance,J.